Investigation of Hole Mobility in GaInP/(In) GaAs/GaAs p-Type Modulation Doped Heterostructures
YANG Quan-kui, LI Ai-zhen, CHEN Jian-xin
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050
Investigation of Hole Mobility in GaInP/(In) GaAs/GaAs p-Type Modulation Doped Heterostructures
YANG Quan-kui;LI Ai-zhen;CHEN Jian-xin
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050
关键词 ：
72.20.Er ,
72.80.Ey
Abstract ： Ga0.51 In0.49 P/(In)GaAs/GaAs heterostructure is regarded as an excellent candidate for two dimensional hole gas system as it has a large valence band offset ratio. In this paper, we report the hole mobility in GaInP/GaAs and GaInP/ In0.20 G0.80 As/GaAs p-type modulation doped heterostructures grown by gas source molecular beam epitaxy with different p-channels and doping methods. The influences of Be:GaAs cap layer, δ-doping, and strained InGaAs p-channel on hole mobility are discussed, and qualitatively explained by the ionized impurity scattering mechanism. Finally, it was shown that the improvement of hole mobility could be achieved by the δ-doping method combined with strained InGaAs channel.
Key words ：
72.20.Er
72.80.Ey
出版日期: 1999-01-01
引用本文:
YANG Quan-kui;LI Ai-zhen;CHEN Jian-xin. Investigation of Hole Mobility in GaInP/(In) GaAs/GaAs p-Type Modulation Doped Heterostructures
[J]. 中国物理快报, 1999, 16(1): 50-52.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1999/V16/I1/50
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1999, Vol. 16 
