Abstract： Direct nitridation of Si (100) surface by low energy N+2 ion beam implantation at room temperature for differention doses and angles of incidence has been investigated by in-situ Auger electron spectroscopy and glancing Rutherford backscattering-channeling (RBS-C) measurements. The results show that with increase of N+2 ion dose the N concentration in the Si surface increases and reaches to a surface stoichiometry close to that of Si3N4. The saturation dose and the thickness of the silicon nitride layer are related to the N+2 ion energy. Complete nitride layer can be formed at incident angles of 0o - 30o. At larger angles the degree of nitridation decreases and no nitride layer could be found at incident angles larger than 54o. The RBS-C results also suggest that a heavy damaged layer beneath the surface nitride layer can be formed due to ion beam implantation.
(Defects and impurities: doping, implantation, distribution, concentration, etc.)
引用本文:
CHAI Jian-wei;YANG Guo-hua;PAN Hao-chang;CAO Jian-qing;
ZHU De-zhang;XU Hong-jie. Auger Electron Spectroscopy and Rut herford Backscattering-Channeling Study of Silicon Nitride Formation by Low Energy N+2 Ion Implantation[J]. 中国物理快报, 1999, 16(2): 120-122.
CHAI Jian-wei, YANG Guo-hua, PAN Hao-chang, CAO Jian-qing,
ZHU De-zhang, XU Hong-jie. Auger Electron Spectroscopy and Rut herford Backscattering-Channeling Study of Silicon Nitride Formation by Low Energy N+2 Ion Implantation. Chin. Phys. Lett., 1999, 16(2): 120-122.
1999, Vol. 16 
