Vacancy-Type Defects in Neutron-Irradiated Silicon
MENG Xiangti
Institute of Nuclear Energy Technology, Tsinghua University, Beijing 100084
Vacancy-Type Defects in Neutron-Irradiated Silicon
MENG Xiangti
Institute of Nuclear Energy Technology, Tsinghua University, Beijing 100084
关键词 ：
61.80.Hg ,
78.70.Bj
Abstract ： Positron annihilation measurements show that the radiation defects and secondary defects in neutron-transmutation-doped (NTD) Si irradiated by two neutron doses can be removed at 600-650°C. The concentration and annealing behavior of V-type and V2 defects are related to the neutron doses. V4 appears at 150°C and 450°C - 550°C in NTD Si irradiated by higher neutron dose.
Key words ：
61.80.Hg
78.70.Bj
出版日期: 1993-10-01
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