Anisotropic Magnetoresistive Sensors and Magnetometers Applying Alternating Bias Magnetic Field
ZOU Fengwu, HE Zhiyong, JIA Kechang*
Department of Physics, Huazhong University of Science and Technology, Wuhan 430074
*State Key Laboratory of Magnetisin, Institute of Physics, Academia Siiiica, Beijing 100080
Anisotropic Magnetoresistive Sensors and Magnetometers Applying Alternating Bias Magnetic Field
ZOU Fengwu;HE Zhiyong;JIA Kechang*
Department of Physics, Huazhong University of Science and Technology, Wuhan 430074
*State Key Laboratory of Magnetisin, Institute of Physics, Academia Siiiica, Beijing 100080
Abstract： Thin permalloy film with uniaxial anisotropy have been prepared by ion-beam sputtering method. Magnetic field sensors of this type film are composed of four magnetoresistors in Wheastone bridge connection. One may obtain sensitivity more than 10mV/Oe with 10-5 Oe resolution by suitable design of sensors parameters. A model based on single domain structure and resistance anisotropy effect explains the behavior of the sensors and a method has been developed to reduce the influence of offset voltage and hysteresis to minimum.
ZOU Fengwu;HE Zhiyong;JIA Kechang*. Anisotropic Magnetoresistive Sensors and Magnetometers Applying Alternating Bias Magnetic Field
[J]. 中国物理快报, 1993, 10(10): 581-584.
ZOU Fengwu, HE Zhiyong, JIA Kechang*. Anisotropic Magnetoresistive Sensors and Magnetometers Applying Alternating Bias Magnetic Field
. Chin. Phys. Lett., 1993, 10(10): 581-584.
1993, Vol. 10 
