Preparation of High Quality p-Type Diamond Thin Films by Thermal Chemical Vapor Deposition
YU San, JIN Zengsun, LÜ Xianyi, ZOU Guangtian
Institute of Atomic and Molecular Physics, Jilin University, Changchun 130023
Preparation of High Quality p-Type Diamond Thin Films by Thermal Chemical Vapor Deposition
YU San;JIN Zengsun;LÜ Xianyi;ZOU Guangtian
Institute of Atomic and Molecular Physics, Jilin University, Changchun 130023
关键词 ：
68.55.Gi ,
68.55.Ln ,
81.15.Gh
Abstract ： P-type semiconducting polycrystalline diamond thin films doped with boron were synthesized on single crystalline silicon substrate by thermal chemical vapor deposition from a tungsten filament and placing boron-contained substance (boron nitride or elemental boron) on sample holder. The films were determined to be the high quality diamond by Raman spectroscopy, X-ray diffraction and scanning electron microscope measurements. The doping properties of boron were measured by Hall method and infrared absorption.
Key words ：
68.55.Gi
68.55.Ln
81.15.Gh
出版日期: 1991-04-01
:
68.55.Gi
68.55.Ln
(Defects and impurities: doping, implantation, distribution, concentration, etc.)
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
引用本文:
YU San;JIN Zengsun;LÜXianyi;ZOU Guangtian. Preparation of High Quality p-Type Diamond Thin Films by Thermal Chemical Vapor Deposition[J]. 中国物理快报, 1991, 8(4): 203-206.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1991/V8/I4/203
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