Ar Ion Implantation Induced Tc Degradation of YBa2 Cu3 O7-x Thin Films
LI Yijie, REN Congxin, CHEN Guoliang, LIN Zixin, ZOU Shichang
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050
Ar Ion Implantation Induced Tc Degradation of YBa2 Cu3 O7-x Thin Films
LI Yijie;REN Congxin;CHEN Guoliang;LIN Zixin;ZOU Shichang
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050
关键词 ：
74.60.Mj ,
74.65.+n ,
74.75.+t
Abstract ： The Ar ion implantation induced changes of structure and transport properties of YBa2 Cu3 O7-x thin films were studied as a function of fluence. Both the zero resistance temperature Tc and the critical current density Jc decrease rapidly with fluence, however, the transition temperature onset almost remains constant at low fluences. At dose of 1.2x1013 Ar/cm2 , the sample has a metal to semiconductor phase transition. When the fluence further increases, a crystalline to amorphous phase transition occurs, and the sample becomes insulator.
Key words ：
74.60.Mj
74.65.+n
74.75.+t
出版日期: 1991-03-01
引用本文:
LI Yijie;REN Congxin;CHEN Guoliang;LIN Zixin;ZOU Shichang. Ar Ion Implantation Induced Tc Degradation of YBa2 Cu3 O7-x Thin Films[J]. 中国物理快报, 1991, 8(3): 157-160.
c Degradation of YBa2 Cu3 O7-x Thin Films. Chin. Phys. Lett., 1991, 8(3): 157-160.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1991/V8/I3/157
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1991, Vol. 8 
