Interfacial Properties of a-Si:H/a-SiNx:H Multilayers Studied by electroabsorption Spectroscopy
LIU Xiangna, ZHAO zhouying, WANG Yong, LI Wenkai
Department of Physics, Nanjing University, Nanjing 210008
Interfacial Properties of a-Si:H/a-SiNx:H Multilayers Studied by electroabsorption Spectroscopy
LIU Xiangna;ZHAO zhouying;WANG Yong;LI Wenkai
Department of Physics, Nanjing University, Nanjing 210008
关键词 ：
68.65.+g ,
73.90.+f ,
78.20.Wc
Abstract ： By using electroabsorption method, we find that the built-in field (~105 V.cm-1 ) in the a-Si sublayers of a-Si:H/a-SiNx :H multilayers points towards the sample surfaces. We ascribe the internal field to the asymmetric distribution of defect states which exist primarily in the silicon side of the silicon-on-nitride interfaces, owing to the large repellent lattice stress there. We also find that the built-in potential depends strongly on x, with a maximum value near x = 1.0. We intend to explain it as a result of structural softening as more N atoms are introduced into Si networks in the range of x > 1.0.
Key words ：
68.65.+g
73.90.+f
78.20.Wc
出版日期: 1991-07-01
:
68.65.+g
73.90.+f
(Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)
78.20.Wc
引用本文:
LIU Xiangna;ZHAO zhouying;WANG Yong;LI Wenkai. Interfacial Properties of a-Si:H/a-SiNx:H Multilayers Studied by electroabsorption Spectroscopy[J]. 中国物理快报, 1991, 8(7): 364-367.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1991/V8/I7/364
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