Formation of Nitride Cu3N by MeV N-Ion Implantation into Cu
CUI Fuzhai*, A.M. Vredenberg, R. de Reus, F. W. Saris
*Department of Materials Science and Engineering, Tsinghua University, Beijing 100084
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407,
1098 SJ Amsterdam, The Netherlands
Formation of Nitride Cu3N by MeV N-Ion Implantation into Cu
CUI Fuzhai*;A.M. Vredenberg;R. de Reus;F. W. Saris
*Department of Materials Science and Engineering, Tsinghua University, Beijing 100084
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407,
1098 SJ Amsterdam, The Netherlands
Abstract： Experimental evidences are presented to show the formation of nitride, Cu3N, in pure Cu sample by N-ion implantation. This result is obtained in the case of MeV ion implantation. Previous experiments showed that this compound can not be formed by N-ion implantation into Cu at incident energy of about 100 keV. This finding indicates there exist certain differences in phase formation by ion implantation at the two energies.
CUI Fuzhai*;A.M. Vredenberg;R. de Reus;F. W. Saris. Formation of Nitride Cu3N by MeV N-Ion Implantation into Cu[J]. 中国物理快报, 1991, 8(10): 525-528.
CUI Fuzhai*, A.M. Vredenberg, R. de Reus, F. W. Saris. Formation of Nitride Cu3N by MeV N-Ion Implantation into Cu. Chin. Phys. Lett., 1991, 8(10): 525-528.
1991, Vol. 8 
