Microstructural Characterization of Epitaxial GaAs on Separation-by-Implanted- Oxygen Substrates
ZHU Wenhua, LIN Chenglu, NI Rushan, LI Aizhen, ZOU Shichang, P. L. F. Hernment*
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050
*Department of Electronic and Electrical Engineering, University of Surrey Guildford, GU2 5HX, United Kingdom
Microstructural Characterization of Epitaxial GaAs on Separation-by-Implanted- Oxygen Substrates
ZHU Wenhua;LIN Chenglu;NI Rushan;LI Aizhen;ZOU Shichang;P. L. F. Hernment*
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050
*Department of Electronic and Electrical Engineering, University of Surrey Guildford, GU2 5HX, United Kingdom
Abstract： The direct growth of GaAs by molecular-beam epitaxy on separation-by-implanted-oxygen substrates is demonstrated. Cross-sectional transmission electron microscopy, Rutherford backscattering and channeling techniques have been employed to characterize these layers. Microtwins and threading dislocation are the predominant defects in the layers. Most of the misfit dislocation are confined within the GaAs and Si interface region by forming a type of edge dislocation.
ZHU Wenhua;LIN Chenglu;NI Rushan;LI Aizhen;ZOU Shichang;P. L. F. Hernment*. Microstructural Characterization of Epitaxial GaAs on Separation-by-Implanted- Oxygen Substrates[J]. 中国物理快报, 1991, 8(10): 529-532.
ZHU Wenhua, LIN Chenglu, NI Rushan, LI Aizhen, ZOU Shichang, P. L. F. Hernment*. Microstructural Characterization of Epitaxial GaAs on Separation-by-Implanted- Oxygen Substrates. Chin. Phys. Lett., 1991, 8(10): 529-532.
1991, Vol. 8 
