DEEP DONOR LEVELS IN Te-DOPED GaAsP ALLOY
ZHANG Wenqing, HUANG Qisheng, KANG Junyong
Department of Physics, Xiamen University, Xiamen 361005
DEEP DONOR LEVELS IN Te-DOPED GaAsP ALLOY
ZHANG Wenqing;HUANG Qisheng;KANG Junyong
Department of Physics, Xiamen University, Xiamen 361005
关键词 ：
71.55.-i ,
72.20.Jv ,
72.80.Ey
Abstract ： Deep donor levels in Te-doped GaAs1-x Px for a large range of compositions have been studied by deep level transient spectroscopy (DLTS). Three kinds of deep levels A, B, and C were observed. Only level A appears in all the samples; it is considered that level A is originated from DX centers. No any regularity of presentation for levels B and C was able to find. Their properties are probably more complicated.
Key words ：
71.55.-i
72.20.Jv
72.80.Ey
出版日期: 1990-03-01
:
71.55.-i
(Impurity and defect levels)
72.20.Jv
(Charge carriers: generation, recombination, lifetime, and trapping)
72.80.Ey
(III-V and II-VI semiconductors)
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1990, Vol. 7 
