Abstract： The properties of intersubband transition of GaAs/A1xGa1-xAs multiple quantum wells with various well widths and doped-well concentrations have been studied. Both theoretical and experimental results are in good agreement. For the appropriate well width and higher doping concentration, we directly observed two intersubband absorption peaks from E1 →E2 and E2→ E3 transitions in well. The experimental results and theoretical analysis are given.
1990, Vol. 7 
