EFFECT OF MAGNETIC FIELD ON THE CHARACTERISTIC OF SILICON SINGLE CRYSTAL
MAO Zaixian, MA1 Zhenhong, ZHOU Shiren* , YE Shuichi*
Institute of Physics, Academia Sinica, Beijing, 100080
* Harbin Institute of Technology, Harbin, 150006
EFFECT OF MAGNETIC FIELD ON THE CHARACTERISTIC OF SILICON SINGLE CRYSTAL
MAO Zaixian;MA1 Zhenhong;ZHOU Shiren* ;YE Shuichi*
Institute of Physics, Academia Sinica, Beijing, 100080
* Harbin Institute of Technology, Harbin, 150006
关键词 ：
72.80.-r ,
61.70.-r
Abstract ： The growth striation, the resistant homogeneity, and the oxygen concentration of silicon single crystal grown by both Transverse Magnetic Czochralski (MCZ) and Czochralski growth methods (CZ) were investigated. The oxygen concentration in MCZ silicon is more uniform and controllable. It is concluded that the Magnetic Czochralski method is an effective method to improve the quality of silicon single crystal.
Key words ：
72.80.-r
61.70.-r
出版日期: 1989-11-01
引用本文:
MAO Zaixian;MA Zhenhong;ZHOU Shiren*;YE Shuichi*. EFFECT OF MAGNETIC FIELD ON THE CHARACTERISTIC OF SILICON SINGLE CRYSTAL
[J]. 中国物理快报, 1989, 6(11): 507-510.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1989/V6/I11/507
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