Pits on the Surfaces of Epitaxial c-Axis YBa2Cu3O7-δ Thin Films Grown on Vicinal SrTiO3 Substrates
HU Wen-Fei1, LI Lin1,
ZHAO Xin-Jie1, LIU Wei1,
CHEN Ying-Fei1, WANG Tian-Sheng2,
QIU Xiang-Gang3
1Institute of Physics & Center for Condensed Matter
Physics, Chinese Academy of Sciences, Beijing100080
2Department of Material Science, Yanshan University, Qinhuangdao 066004
CREST, Japan Science and Technology Cooperation, 3-4-1 Okubo, Shinjuku, Tokyo 169, Japan
Pits on the Surfaces of Epitaxial c-Axis YBa2Cu3O7-δ Thin Films Grown on Vicinal SrTiO3 Substrates
HU Wen-Fei1;LI Lin1;
ZHAO Xin-Jie1;LIU Wei1;
CHEN Ying-Fei1; WANG Tian-Sheng2;
QIU Xiang-Gang3
1Institute of Physics & Center for Condensed Matter
Physics, Chinese Academy of Sciences, Beijing100080
2Department of Material Science, Yanshan University, Qinhuangdao 066004
CREST, Japan Science and Technology Cooperation, 3-4-1 Okubo, Shinjuku, Tokyo 169, Japan
Abstract： The reoccurrence of pits has been found on the surfaces of c-axis YBa2Cu3O7-δ (YBCO) films grown epitaxially on 10°vicinal SrTiO3 substrates by pulsed laser deposition. They are always associated with films with a step-terrace structure, while polycrystalline films have no pits. Pit formation is attributed to the large interfacial stress induced by vicinal substrate and oxygen deficiency of the YBCO film during the tetragonal-to-orthorhombic (T-O) phase transition, which cannot be released by forming twins, and leads to rupturing of the film surface. By reducing the oxidation partial pressure for the T-O phase transition to 80Pa, no pits were formed, and the YBCO film is superconducting at 60K.
HU Wen-Fei;LI Lin;
ZHAO Xin-Jie;LIU Wei;
CHEN Ying-Fei; WANG Tian-Sheng;
QIU Xiang-Gang. Pits on the Surfaces of Epitaxial c-Axis YBa2Cu3O7-δ Thin Films Grown on Vicinal SrTiO3 Substrates[J]. 中国物理快报, 2001, 18(1): 91-93.
HU Wen-Fei, LI Lin,
ZHAO Xin-Jie, LIU Wei,
CHEN Ying-Fei, WANG Tian-Sheng,
QIU Xiang-Gang. Pits on the Surfaces of Epitaxial c-Axis YBa2Cu3O7-δ Thin Films Grown on Vicinal SrTiO3 Substrates. Chin. Phys. Lett., 2001, 18(1): 91-93.
2001, Vol. 18 
