Growth and Characterization of Modulation-Doped
Alx Ga1-x N/GaN Heterostructures
SHEN Bo1 , ZHANG Rong1 , SHI Yi1 , ZHENG You-Dou1 , T. Someya2 , Y. Arakawa2 ,
1 National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093
2 Research Center for Advanced Science and Technology, and Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
Growth and Characterization of Modulation-Doped
Alx Ga1-x N/GaN Heterostructures
SHEN Bo1 ;ZHANG Rong1 ;SHI Yi1 ;ZHENG You-Dou1 ;T. Someya2 ;Y. Arakawa2 ,
1 National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093
2 Research Center for Advanced Science and Technology, and Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
关键词 ：
81.15.Gh ,
73.50.Dn
Abstract ： The modulation-doped Al0.22 Ga0.78 N/GaN heterostructures with different Al0.22 Ga0.78 N barrier thicknesses were grown by means of metal--organic chemical vapour deposition. The Al0.22 Ga0.78 N layer still has pseudomorphic growth when its thickness is 53nm. The mobility of the two-dimensional electron gas (2DEG) at the heterointerfaces is much higher than that of the electrons in GaN films at both 300 and 77K. The dramatic decrease of the 2DEG mobility in an Al0.22 Ga0.78 N/GaN heterostructure corresponds to the partial relaxation of the Al0.22 Ga0.78 N barrier.
Key words ：
81.15.Gh
73.50.Dn
出版日期: 2001-01-01
:
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
73.50.Dn
(Low-field transport and mobility; piezoresistance)
引用本文:
SHEN Bo;ZHANG Rong;SHI Yi;ZHENG You-Dou;T. Someya;Y. Arakawa;. Growth and Characterization of Modulation-Doped
Alx Ga1-x N/GaN Heterostructures
[J]. 中国物理快报, 2001, 18(1): 129-131.
x Ga1-x N/GaN Heterostructures
. Chin. Phys. Lett., 2001, 18(1): 129-131.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2001/V18/I1/129
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