Growth and Photoluminescence of Epitaxial CeO2 Film on Si (111) Substrate
GAO Fei, LI Guo-Hua1, ZHANG Jian-Hui, QIN Fu-Guang, YAO Zhen-Yu, LIU Zhi-Kai, WANG Zhan-Guo, LIN Lan-Ying
Laboratory of Semiconductor Materials Science, 1National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Growth and Photoluminescence of Epitaxial CeO2 Film on Si (111) Substrate
Laboratory of Semiconductor Materials Science, 1National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Abstract： CeO2 film with a thickness of about 80 nm was deposited by a mass-analyzed low-energy dual ion beams deposition technique on Si (111) substrate. Reflection high-energy electron diffraction and x-ray diffraction measurements showed that the film is a single crystal. The tetravalent state of Ce in the film was confirmed by x-ray photoelectron spectroscopy measurement, indicating that stoichiometric CeO2 was formed. Violet/blue light emission (379.5 nm) was observed at room temperature, which may be tentatively explained by charge transitions from the 4f band to the valence band of CeO2.
(Ion and electron beam-assisted deposition; ion plating)
引用本文:
GAO Fei; LI Guo-Hua; ZHANG Jian-Hui;QIN Fu-Guang;YAO Zhen-Yu;LIU Zhi-Kai;WANG Zhan-Guo;LIN Lan-Ying. Growth and Photoluminescence of Epitaxial CeO2 Film on Si (111) Substrate[J]. 中国物理快报, 2001, 18(3): 443-444.
GAO Fei, LI Guo-Hua, ZHANG Jian-Hui, QIN Fu-Guang, YAO Zhen-Yu, LIU Zhi-Kai, WANG Zhan-Guo, LIN Lan-Ying. Growth and Photoluminescence of Epitaxial CeO2 Film on Si (111) Substrate. Chin. Phys. Lett., 2001, 18(3): 443-444.
2001, Vol. 18 
