Photoluminescent Properties of ZnO Films Deposited on Si Substrates
ZHANG Guo-Bin1, SHI Chao-Shu1,2, HAN Zheng-Fu1, SHI Jun-Yan1, FU Zhu-Xi2, M. Kirm3, G. Zimmerer3
1National Synchrotron Radiation Laboratory,
2Department of Physics, University of Science and Technology of China, Hefei 230026
3II Institut für Experimental Physik der Universität Hamburg, Germany
Photoluminescent Properties of ZnO Films Deposited on Si Substrates
1National Synchrotron Radiation Laboratory,
2Department of Physics, University of Science and Technology of China, Hefei 230026
3II Institut für Experimental Physik der Universität Hamburg, Germany
Abstract： The photoluminescence of ZnO films deposited on Si substrates by reactive dc sputtering has been studied by using a synchrotron radiation(SR) light source. The excitation spectra show a strong excitation band around 195 nm related to 390 nm emission band. Under SR vacuum ultraviolet excitation, a new emission band peaked at 290 nm was found for the first time, besides the ultraviolet emission band (390 nm) and green band (520 nm).
ZHANG Guo-Bin;SHI Chao-Shu;HAN Zheng-Fu;SHI Jun-Yan;FU Zhu-Xi;M. Kirm;G. Zimmerer. Photoluminescent Properties of ZnO Films Deposited on Si Substrates
[J]. 中国物理快报, 2001, 18(3): 441-442.
ZHANG Guo-Bin, SHI Chao-Shu, HAN Zheng-Fu, SHI Jun-Yan, FU Zhu-Xi, M. Kirm, G. Zimmerer. Photoluminescent Properties of ZnO Films Deposited on Si Substrates
. Chin. Phys. Lett., 2001, 18(3): 441-442.
2001, Vol. 18 
