A Narrow Photoluminescence Linewidth of 19.2 meV at 1.35μm from In0.5 Ga0.5 As/GaAs Quantum Island Structure Grown by Molecular Beam Epitaxy
WANG Xiao-Dong, NIU Zhi-Chuan, FENG Song-Lin, MIAO Zhen-Hua
National Laboratory for Superlattices and Microstructures,
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
A Narrow Photoluminescence Linewidth of 19.2 meV at 1.35μm from In0.5 Ga0.5 As/GaAs Quantum Island Structure Grown by Molecular Beam Epitaxy
WANG Xiao-Dong;NIU Zhi-Chuan;FENG Song-Lin;MIAO Zhen-Hua
National Laboratory for Superlattices and Microstructures,
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
关键词 ：
81.05.Ea ,
68.35.Bs ,
78.66.Fd
Abstract ： Self-organized In0.5 Ga0.5 As/GaAs quantum island structure emitting at 1.35μm at room temperature has been successfully fabricated by molecular beam epitaxy via cycled (InAs)1 /(GaAs)1 monolayer deposition method. Photoluminescence measurement shows that a very narrow linewidth of 19.2 meV at 300 K has been reached for the first time, indicating effective suppression of inhomogeneous broadening of optical emission from the In0.5 Ga0.5 As island structure due to indium segregation reduction by introducing an AlAs layer and the strain reduction by inserting an In0.2 Ga0.8 As layer overgrown on the top of islands. The mounds-like morphology of the islands elongated along the [1ī0] azimuth are observed by the atomic force microscopy measurement, which reveals the fact that strain in the islands is partially relaxed along the [1ī0] direction. Our results present important information for the fabrication of 1.3μm wavelength quantum dot devices.
Key words ：
81.05.Ea
68.35.Bs
78.66.Fd
出版日期: 2001-04-01
引用本文:
WANG Xiao-Dong;NIU Zhi-Chuan;FENG Song-Lin;MIAO Zhen-Hua. A Narrow Photoluminescence Linewidth of 19.2 meV at 1.35μm from In0.5 Ga0.5 As/GaAs Quantum Island Structure Grown by Molecular Beam Epitaxy[J]. 中国物理快报, 2001, 18(4): 608-610.
0.5 Ga0.5 As/GaAs Quantum Island Structure Grown by Molecular Beam Epitaxy. Chin. Phys. Lett., 2001, 18(4): 608-610.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2001/V18/I4/608
[1]
WANG Jian-Feng;ZHANG Bao-Shun;ZHANG Ji-Cai;ZHU Jian-Jun;WANG Yu-Tian;CHEN Jun; LIU Wei;JIANG De-Sheng;YAO Duan-Zheng; YANG Hui. Reduction of Dislocations in GaN Epilayer Grown on Si (111) Substrates using a GaN Intermedial Layer
[2]
WANG Huan;YAO Shu-De;PAN Yao-Bo;YU Tong-Jun;ZHANG Guo-Yi. Microstructure Study on Heterostructures of AlInGaN/GaN/Al2 O3 by Using Rutherford ackscattering/Channelling and XRD
[3]
YU Nai-Sen;GUO Li-Wei;CHEN Hong;XING Zhi-Gang;WANG Jing;ZHU Xue-Liang;PENG Ming-Zeng;YAN Jian-Feng;JIA Hai-Qiang;ZHOU Jun-Ming. Luminescent Characteristics of Near Ultraviolet InGaN/GaN MQWs Grown on Grooved Sapphire Substrates Fabricated by Wet Chemical Etching
[4]
MA Hong-Xia;HAN Yan-Jun;SHENTU Wei-Jin;ZHANG Xian-Peng;LUO Yi;. A Novel Ni/Ag/Pt Ohmic Contact to P-Type GaN for Flip-Chip Light-Emitting Diodes
[5]
ZHANG Yong-Gang;ZHENG Yan-Lan;LIN Chun;LI Ai-Zhen;LIU Sheng. Continuous Wave Performance and Tunability of MBE Grown 2.1μm InGaAsSb/AlGaAsSb MQW lasers
[6]
XIE Xin-Jian;ZHONG Fei;QIU Kai;LIU Gui-Feng;YIN Zhi-Jun;WANG Yu-Qi;LI Xin-Hua;JI Chang-Jian;HAN Qi-Feng;CHEN Jia-Rong;CAO Xian-Cun. Growth of Strain Free GaN Layers on (0001) Oriented Sapphire by Using Quasi-Porous GaN Template
[7]
CHEN Zhi-Tao;;SU Yue-Yong;;YANG Zhi-Jian;;ZHANG Yan;;ZHANG Bin;;GUO Li-Ping;XU Ke;;PAN Yao-Bao;;ZHANG Han;ZHANG Guo-Yi;. Room-Temperature Ferromagnetism of Ga1-x Mnx N Grown by Low-Pressure Metalorganic Chemical Vapour Deposition
[8]
XUE Cheng-Shan;WU Yu-Xin;ZHUANG Hui-Zhao;TIAN De-Heng;LIU Yi-An;HE Jian-Ting;AI Yu-Jie;SUN Li-Li;WANG Fu-Xue;CAO Yu-Ping. Fabrication of Syringe-Shaped GaN Nanorods
[9]
DENG Jia-Jun;ZHAO Jian-Hua;BI Jing-Feng;ZHENG Yu-Hong;JIA Quan-Jie;NIU Zhi-Chuan;WU Xiao-Guang;ZHENG Hou-Zhi. Growth and Magnetic Properties of Zincblende CrSb Epilayers on Relaxed and Strained (In, Ga)As Buffers
[10]
ZHENG Kai;MA Xiao-Yu;LIN Tao;WANG Jun;LIU Su-Ping;ZHANG Guang-Ze. Low-Threshold-Current and High-out-Power 660nm Laser Diodes with a p-GaAs Current Blocking Layer for DVD-RAM/R
[11]
LU Li-Wu;CHEN Ting-Jie;SHEN Bo;WANG Jiang-Nong;GE Wei-Kun. Optical Properties of Phase-Separated GaN1-x Px Alloys Grown by Light-Radiation Heating Metal-Organic Chemical Vapour Deposition
[12]
HAN Xiu-Xun;WU Jie-Jun;LI Jie-Min;CONG Guang-Wei;LIU Xiang-Lin;ZHU Qin-Sheng;WANG Zhan-Guo. Photoluminescence Investigation of Two-Dimensional Electron Gas in an Undoped Alx Ga1-x N/GaN Heterostructure
[13]
ZHANG Hao;ZHENG Hou-Zhi;XU Ping;PENG Hong-Ling;TAN Ping-Heng;YANG Fu-Hua;NI Hai-Qiao;ZENG Yu-Xin;
GAN Hua-Dong;ZHU Hui. Tuning of Detection Wavelength in a Resonant-Cavity-Enhanced Quantum-Dot-Embedded Photodiode by Changing Detection Angle
[14]
LÜWei;LI Da-Bing;ZHANG Zi-Yang;LI Chao-Rong;ZHANG Ze;XU Bo;WANG Zhan-Gum. Rapid Thermal Annealing Effects on Structural and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots Capped by InAlAs/InGaAs Layers
[15]
LÜWei;LI Da-Bing;LI Chao-Rong;CHEN Gang;ZHANG Ze. Effect of Misfit Dislocation Originated from Strained Layer on Photoluminescence Properties of Inx Ga1-x N/GaN Multiple Quantum Wells
2001, Vol. 18 
