Structure and Photoluminescence of InGaAs Quantum Dots Formed on an InAlAs Wetting Layer
ZHANG Yuan-Chang1, HUANG Chang-Jun2, YE Xiao-Ling1, XU Bo1, DING Ding1, WANG Ji-Zheng1, LI Yue-Fa1, LIU Feng-Qi1, WANG Zhan-Guo1
1Laboratory of Semiconductor Materials Science, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083
2State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083
Structure and Photoluminescence of InGaAs Quantum Dots Formed on an InAlAs Wetting Layer
1Laboratory of Semiconductor Materials Science, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083
2State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083
Abstract： We have developed a new self-assembled quantum dot system where InGaAs dots are formed on an InAlAs wetting layer and embedded in the GaAs matrix. The structure is realized by special sample designation and demonstrated by low-temperature photoluminescence measurements. In contrast to the traditional InAs/GaAs quantum dots dominated by the ensemble effect, the temperature dependence of photoluminescence of such a quantum dot structure behaves as decoupled quantum dots. This can be attributed to the enhanced potential confinement for the dots provided by a higher-energy barrier in the wetting layer.
ZHANG Yuan-Chang;HUANG Chang-Jun;YE Xiao-Ling;XU Bo;DING Ding;WANG Ji-Zheng;LI Yue-Fa;LIU Feng-Qi;WANG Zhan-Guo. Structure and Photoluminescence of InGaAs Quantum Dots Formed on an InAlAs Wetting Layer[J]. 中国物理快报, 2001, 18(10): 1411-1414.
ZHANG Yuan-Chang, HUANG Chang-Jun, YE Xiao-Ling, XU Bo, DING Ding, WANG Ji-Zheng, LI Yue-Fa, LIU Feng-Qi, WANG Zhan-Guo. Structure and Photoluminescence of InGaAs Quantum Dots Formed on an InAlAs Wetting Layer. Chin. Phys. Lett., 2001, 18(10): 1411-1414.
2001, Vol. 18 
