Time-Dependent Analysis of High-Gain Triggering in Semi-insulating GaAs Photoconductive Switches
SHI Wei1 , ZHAO Wei2 , LIANG Zhen-Xian3 , SUN Xiao-Wei4
1 Applied Physics Department, Xi’an University of
Technology, Xi’an 710048
2 State Kay Laboratory of Transient Optics and Technology, Xi’an 710068
3 School of Electrical Engineering, Xi’an Jiaotong University, Xi’an 710049
4 Division of Microelectronics, Nanyang Technological University, Singapore 639798
Time-Dependent Analysis of High-Gain Triggering in Semi-insulating GaAs Photoconductive Switches
SHI Wei1 ;ZHAO Wei2 ;LIANG Zhen-Xian3 ;SUN Xiao-Wei4
1 Applied Physics Department, Xi’an University of
Technology, Xi’an 710048
2 State Kay Laboratory of Transient Optics and Technology, Xi’an 710068
3 School of Electrical Engineering, Xi’an Jiaotong University, Xi’an 710049
4 Division of Microelectronics, Nanyang Technological University, Singapore 639798
关键词 ：
42.65.Re ,
72.40.+w ,
71.20.Nr
Abstract ： The transient transport of photo-generated carriers and temporal variation of the built-in field, during triggering in semi-insulating GaAs photoconductive switches, have been investigated by using a special Monte Carlo particle simulator. It shows that the built-in field can exceed the intrinsic avalanche field of semi-insulating GaAs under certain optical and electrical condition. In such a case, local breakdown ionization is considered to be responsible for the transition in GaAs high-gain switching. The optical and electrical triggering thresholds are calculated and the calculated values of optical and electrical thresholds and partial delay time are in agreement with the published experimental data.
Key words ：
42.65.Re
72.40.+w
71.20.Nr
出版日期: 2001-11-01
:
42.65.Re
(Ultrafast processes; optical pulse generation and pulse compression)
72.40.+w
(Photoconduction and photovoltaic effects)
71.20.Nr
(Semiconductor compounds)
引用本文:
SHI Wei;ZHAO Wei;LIANG Zhen-Xian;SUN Xiao-Wei. Time-Dependent Analysis of High-Gain Triggering in Semi-insulating GaAs Photoconductive Switches[J]. 中国物理快报, 2001, 18(11): 1479-1480.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2001/V18/I11/1479
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