Epitaxial Growth of High-Quality Silicon Films on Double-Layer
Porous Silicon
HUANG Yi-Ping1, ZHU Shi-Yang1, LI Ai-Zhen1, WANG Jin1, HUANG Jing-Yun2, YE Zhi-Zhen2
1Department of Microelectronics, ASIC & System State
Key Laboratory, Fudan University, Shanghai 200433
2State Key Laboratory of Silicon Material Science, Zhejiang Univsity, Hangzhou 310027
Epitaxial Growth of High-Quality Silicon Films on Double-Layer
Porous Silicon
1Department of Microelectronics, ASIC & System State
Key Laboratory, Fudan University, Shanghai 200433
2State Key Laboratory of Silicon Material Science, Zhejiang Univsity, Hangzhou 310027
Abstract： The epitaxial growth of high-quality silicon layer on double-layer porous silicon by ultra-high vacuum/chemical vapour deposition has been reported. The two-step anodization process results in a double-layer porous silicon structure with a different porosity. This double-layer porous silicon structure and an extended low-temperature annealing in a vacuum system was found to be helpful in subsequent silicon epitaxial growth. X-ray diffraction, cross-sectional transmission electron microscopy and spreading resistance testing were used in this work to study the properties of epitaxial silicon layers grown on the double-layer porous silicon. The results show that the epitaxial silicon layer is of good crystallinity and the same orientation with the silicon substrate and the porous silicon layer.
2001, Vol. 18 
