Epitaxial Growth of High-Quality Silicon Films on Double-Layer
Porous Silicon
HUANG Yi-Ping1, ZHU Shi-Yang1, LI Ai-Zhen1, WANG Jin1, HUANG Jing-Yun2, YE Zhi-Zhen2
1Department of Microelectronics, ASIC & System State
Key Laboratory, Fudan University, Shanghai 200433
2State Key Laboratory of Silicon Material Science, Zhejiang Univsity, Hangzhou 310027
Epitaxial Growth of High-Quality Silicon Films on Double-Layer
Porous Silicon
1Department of Microelectronics, ASIC & System State
Key Laboratory, Fudan University, Shanghai 200433
2State Key Laboratory of Silicon Material Science, Zhejiang Univsity, Hangzhou 310027
Abstract: The epitaxial growth of high-quality silicon layer on double-layer porous silicon by ultra-high vacuum/chemical vapour deposition has been reported. The two-step anodization process results in a double-layer porous silicon structure with a different porosity. This double-layer porous silicon structure and an extended low-temperature annealing in a vacuum system was found to be helpful in subsequent silicon epitaxial growth. X-ray diffraction, cross-sectional transmission electron microscopy and spreading resistance testing were used in this work to study the properties of epitaxial silicon layers grown on the double-layer porous silicon. The results show that the epitaxial silicon layer is of good crystallinity and the same orientation with the silicon substrate and the porous silicon layer.