Highly Conductive Nb-Doped BaTiO3 Epitaxial Thin Films Grown by Laser Molecular Beam Epitaxy
YAN Lei, LÜ Hui-Bin, CHEN Zheng-Hao, DAI Shou-Yu, TAN Guo-Tai, YANG Guo-Zhen
Laboratory of Optical Physics, Institute of Physics and
Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080
Highly Conductive Nb-Doped BaTiO3 Epitaxial Thin Films Grown by Laser Molecular Beam Epitaxy
YAN Lei;LÜ Hui-Bin;CHEN Zheng-Hao;DAI Shou-Yu;TAN Guo-Tai;YANG Guo-Zhen
Laboratory of Optical Physics, Institute of Physics and
Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080
关键词 ：
72.80.Ga ,
73.61.Le ,
74.62.Dh ,
81.15.Fg
Abstract ： The n-type conductive BaNb0.3 Ti0.7 O3 thin films were grown on SrTiO3 (001) substrates by computer-controlled laser molecular beam epitaxy. The BaNb0.3 Ti0.7 O3 films with (001) orientation are epitaxially grown on SrTiO3 substrates, as confirmed by x-ray diffraction techniques. The root-mean-square surface roughness of the deposited thin films is measured to be 0.24nm by atomic force microscopy. The resistivity, carrier concentration and mobility of the BaNb0.3 Ti0.7 O3 thin film are 5.9 x 10-4 Ω.cm, 1.8 x 1021 cm-3 and 10.7cm2 .V-1 .s-1 at room temperature, respectively, which are the best values in Nb-doped BaTiO3 thin films reported so far to our knowledge.
Key words ：
72.80.Ga
73.61.Le
74.62.Dh
81.15.Fg
出版日期: 2001-11-01
:
72.80.Ga
(Transition-metal compounds)
73.61.Le
(Other inorganic semiconductors)
74.62.Dh
(Effects of crystal defects, doping and substitution)
81.15.Fg
(Pulsed laser ablation deposition)
引用本文:
YAN Lei;LÜHui-Bin;CHEN Zheng-Hao;DAI Shou-Yu;TAN Guo-Tai;YANG Guo-Zhen. Highly Conductive Nb-Doped BaTiO3 Epitaxial Thin Films Grown by Laser Molecular Beam Epitaxy[J]. 中国物理快报, 2001, 18(11): 1513-1515.
3 Epitaxial Thin Films Grown by Laser Molecular Beam Epitaxy. Chin. Phys. Lett., 2001, 18(11): 1513-1515.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2001/V18/I11/1513
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