Binding Energy of Positively and Negatively Charged Excitons
in GaAs/AlxGa1-xAs Quantum Wells
LIU Jian-Jun1,2,3, ZHANG Shu-Fang1, YANG Guo-Chen2, LI Shu-Shen3
1Department of Physics, Hebei Normal University, Shijiazhuang 050016
2Institute of Physics, Hebei University of Technology, Tianjin 300130
3National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Binding Energy of Positively and Negatively Charged Excitons
in GaAs/AlxGa1-xAs Quantum Wells
LIU Jian-Jun1,2,3;ZHANG Shu-Fang1;YANG Guo-Chen2;LI Shu-Shen3
1Department of Physics, Hebei Normal University, Shijiazhuang 050016
2Institute of Physics, Hebei University of Technology, Tianjin 300130
3National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Abstract： Using a simple two-parameter wavefunction, we calculate variationally the binding energy of positively and negatively charged excitons in GaAs/AlxGa1-xAs quantum wells for the well widths from 10 to 300Å, We consider the effect of effective mass, dielectric constant mismatch in the two materials, and the whole correlation among the particles. The results are discussed and compared in detail with previous experimental and theoretical results, which show a fair agreement with them.
(Collective excitations (including excitons, polarons, plasmons and other charge-density excitations))
引用本文:
LIU Jian-Jun;;ZHANG Shu-Fang;YANG Guo-Chen;LI Shu-Shen. Binding Energy of Positively and Negatively Charged Excitons
in GaAs/AlxGa1-xAs Quantum Wells[J]. 中国物理快报, 2002, 19(1): 114-116.
LIU Jian-Jun, , ZHANG Shu-Fang, YANG Guo-Chen, LI Shu-Shen. Binding Energy of Positively and Negatively Charged Excitons
in GaAs/AlxGa1-xAs Quantum Wells. Chin. Phys. Lett., 2002, 19(1): 114-116.
2002, Vol. 19 
