Photoluminescence and Optically Pumped Ultraviolet Lasing from
Nanocrystalline ZnO Thin Films Prepared by Thermal Oxidation of High Quality ZnS Thin Films
ZHANG Xi-Tian, LIU Yi-Chun, ZHANG Li-Gong, ZHANG Ji-Ying, LÜ You-Ming, SHEN De-Zhen, XU Wu, ZHONG Guo-Zhu, FAN Xi-Wu, KONG Xiang-Gui
Open Laboratory of Excited State Processes, Changchun Institute of Optical Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021
Photoluminescence and Optically Pumped Ultraviolet Lasing from
Nanocrystalline ZnO Thin Films Prepared by Thermal Oxidation of High Quality ZnS Thin Films
Abstract： We present a simple and useful method for preparing high-quality nanocrystalline ZnO thin films, i.e. the thermal oxidation of high-quality ZnS films prepared by low-pressure metal-organic chemical vapor deposition technique. The x-ray diffraction measurements reveal that the nanocrystalline ZnO has a hexagonal wurtzite structure. Raman spectra show that the longitudinal optical phonon with the E1-mode appears at 578 cm-1. The multiple phonon scattering process is also observed, indicating the formation of a high quality nanocrystalline ZnO thin film. The photoluminescence spectrum has a single emission peak at 3.264 eV from the free-exciton mission, under the condition of low excitation power at room temperature. However, when excitation intensities exceed the threshold of 150 kW/cm2, a new and narrow peak emerges at lower energies, which are attributed to exciton-exciton collisions, and is called the P line. The intensity of this peak increases superlinearly with the pumping power over a threshold value. This supplies strong evidence of stimulated emission. The multiple longitudinal cavity modes observed in the stimulated emission spectrum indicate the successful realization of optically pumped lasing from nanocrystalline ZnO films at room temperature.
2002, Vol. 19 
