LI De-Hua1, WANG Ling1, GAO Chun-Qing1,5, ZHANG Zhi-Guo1, FENG Bao-Hua1, Volker Gaebler2, LIU Bai-Ning2, H. J. Eichler2, ZHANG Shi-Wen3, LIU An-Han3, SHEN De-Zhong4
1Laboratory of Optical Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
2Optical Institute, Technical University Berlin, Strasse de 17 Juni 135, D-10623 Berlin, Germany
3North China Research Institute of Electro-Optics, Beijing 100015
4Research Institute of Synthetic Crystal, P.O. Box 733, Beijing 100018
5Optical Engineering Department, Beijing Institute of Technology, Beijing 100081 Permanent address
LI De-Hua1;WANG Ling1;GAO Chun-Qing1,5;ZHANG Zhi-Guo1;FENG Bao-Hua1;Volker Gaebler2;LIU Bai-Ning2;H. J. Eichler2;ZHANG Shi-Wen3;LIU An-Han3;SHEN De-Zhong4
1Laboratory of Optical Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
2Optical Institute, Technical University Berlin, Strasse de 17 Juni 135, D-10623 Berlin, Germany
3North China Research Institute of Electro-Optics, Beijing 100015
4Research Institute of Synthetic Crystal, P.O. Box 733, Beijing 100018
5Optical Engineering Department, Beijing Institute of Technology, Beijing 100081 Permanent address
Abstract： We carried out the operation of an intracavity frequency-doubled self-Q-switched Nd,Cr:YAG/KNbO3 946/473nm microchip laser pumped by a Ti:sapphire laser. The overall cavity length was about 4 mm. The maximum average blue power of 12 mW was achieved with a repetition rate of 13 kHz at an absorbed pump power of 545 mW. The pulses of 473 nm laser had duration of 7ns and peak power of 132 W at this pump level. The conversion efficiency was 2.2 % with respect to absorbed pump power of 808 nm laser.
2002, Vol. 19 
