Interfacial Properties of AlN/Si(111) Grown by Metal-Organic
Chemical Vapor Deposition
XI Dong-Juan, ZHENG You-Dou, CHEN Peng, ZHAO Zuo-Ming, CHEN Ping, XIE Shi-Yong, JIANG Ruo-Lian, SHEN Bo, GU Shu-Lin, ZHANG Rong
Department of Physics, Nanjing University, Nanjing 210093
Interfacial Properties of AlN/Si(111) Grown by Metal-Organic
Chemical Vapor Deposition
XI Dong-Juan;ZHENG You-Dou;CHEN Peng;ZHAO Zuo-Ming;CHEN Ping;XIE Shi-Yong;JIANG Ruo-Lian;SHEN Bo;GU Shu-Lin;ZHANG Rong
Department of Physics, Nanjing University, Nanjing 210093
关键词 ：
68.55.Jk ,
81.05.Ea ,
82.80.Pv
Abstract ： We have studied the interfacial structures of AlN/Si(111) grown by metal-organic 0chemical vapor deposition. X-ray photoelectron spectrum and Auger electron spectrum were employed to analyse the components and chemical structures of AlN/Si(111). The results indicated that a mix-crystal transition region, approximately 12nm, was present between AlN film and Si substrate and it was composed of AlN and Si3 N4 . After analysis we found the existence of Si3 N4 could not be avoided in AlN/Si(111) interface because of strong diffusion at 1070°C. Even in AlN layer Si-N bonds, Si-Si bonds can be found.
Key words ：
68.55.Jk
81.05.Ea
82.80.Pv
出版日期: 2002-04-01
:
68.55.Jk
81.05.Ea
(III-V semiconductors)
82.80.Pv
(Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))
引用本文:
XI Dong-Juan;ZHENG You-Dou;CHEN Peng;ZHAO Zuo-Ming;CHEN Ping;XIE Shi-Yong;JIANG Ruo-Lian;SHEN Bo;GU Shu-Lin;ZHANG Rong. Interfacial Properties of AlN/Si(111) Grown by Metal-Organic
Chemical Vapor Deposition[J]. 中国物理快报, 2002, 19(4): 543-545.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2002/V19/I4/543
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