Characterization of Femtosecond Low-Temperature-Grown GaAs Photoconductive Switch
LIN Wei-Zhu, LIU Zhi-Gang, LIAO Rui, ZHANG Hai-Chao, GUO Bing, WEN Jin-Hui, LAI Tian-Shu
State Key Laboratory of Optoelectonic Materials and Techniques and Department of Physics, Zhongshan University, Guangzhou, 510275
Characterization of Femtosecond Low-Temperature-Grown GaAs Photoconductive Switch
LIN Wei-Zhu;LIU Zhi-Gang;LIAO Rui;ZHANG Hai-Chao;GUO Bing;WEN Jin-Hui;LAI Tian-Shu
State Key Laboratory of Optoelectonic Materials and Techniques and Department of Physics, Zhongshan University, Guangzhou, 510275
关键词 ：
73.50.Gr ,
78.47.+p ,
78.40.-q
Abstract ： A photoconductive response time, As short as 350 fs, of a
Key words ：
73.50.Gr
78.47.+p
78.40.-q
出版日期: 2002-04-01
:
73.50.Gr
(Charge carriers: generation, recombination, lifetime, trapping, mean free paths)
78.47.+p
78.40.-q
(Absorption and reflection spectra: visible and ultraviolet)
引用本文:
LIN Wei-Zhu;LIU Zhi-Gang;LIAO Rui;ZHANG Hai-Chao;GUO Bing;WEN Jin-Hui;LAI Tian-Shu. Characterization of Femtosecond Low-Temperature-Grown GaAs Photoconductive Switch[J]. 中国物理快报, 2002, 19(4): 557-559.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2002/V19/I4/557
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2002, Vol. 19 
