Abstract： For different donor distribution types we theoretically investigate the intersubband transitions of single Si δ-doped GaAs structure as dependent on the applied electric field. The diffusion of donor impurities is taken into account in two different models: a triangular distribution and a non-uniform distribution. The electronic properties such as the effective δ-potential, the subband energies and the eigen-envelope wavefunctions have been calculated by solving the Schrödinger and Poisson equations self-consistently. Abrupt changes of the subband energy difference and the absorption peak are realized whenever the applied electric field reaches a certain value. These critical electric field values change dependent on the donor distribution model. The intersubband absorption spectrum shows that redshifts appear up to the critical electric field value for the (1-2) and (1-3) intersubband transitions. This spectrum also shows that blueshifts can occur when the electric fields are higher than certain values. These changing intersubband absorption peaks can be used in various infrared optical device applications.
(Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)
引用本文:
Emine OZTURK;Ismail SOKMEN. Intersubband Transitions of Si δ-Doped GaAs Layer for Different Donor Distribution Models[J]. 中国物理快报, 2004, 21(5): 930-933.
Emine OZTURK, Ismail SOKMEN. Intersubband Transitions of Si δ-Doped GaAs Layer for Different Donor Distribution Models. Chin. Phys. Lett., 2004, 21(5): 930-933.
2004, Vol. 21 
