Enhancement of the Spectral Width of High-Power 1.5 μm Integrated Superluminescent Light Source by Quantum Well Intermixing Process
XU Cheng-Dong1, DU Guo-Tong1, SONG Jun-Feng1, HUANG Yong-Zhen2
1College of Science and Engineering, State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun 130023
2State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
Enhancement of the Spectral Width of High-Power 1.5 μm Integrated Superluminescent Light Source by Quantum Well Intermixing Process
1College of Science and Engineering, State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun 130023
2State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
Abstract： A novel type of integrated InGaAsP superluminescent light source was fabricated based on the tilted ridge-waveguide structure with selective-area quantum well (QW) intermixing. The bandgap structure along the length of the device was modified by impurity free vacancy diffusion QW intermixing. The spectral width was broadened from the 16 nm of the normal devices to 37 nm of the QW intermixing enhanced devices at the same output power level. High superluminescent power (210 mW) was obtained under pulsed conditions with a spectral width of 37 nm.
XU Cheng-Dong;DU Guo-Tong;SONG Jun-Feng;HUANG Yong-Zhen. Enhancement of the Spectral Width of High-Power 1.5 μm Integrated Superluminescent Light Source by Quantum Well Intermixing Process[J]. 中国物理快报, 2004, 21(5): 963-965.
XU Cheng-Dong, DU Guo-Tong, SONG Jun-Feng, HUANG Yong-Zhen. Enhancement of the Spectral Width of High-Power 1.5 μm Integrated Superluminescent Light Source by Quantum Well Intermixing Process. Chin. Phys. Lett., 2004, 21(5): 963-965.
2004, Vol. 21 
