Pseudo-Spin-Valve Trilayer Using Amorphous CoNbZr Layer: Giant Magnetoresistance, Domain Structures and Potentials for Spin-Electronic Devices
WEN Qi-Ye, ZHANG Huai-Wu, JIANG Xiang-Dong, SHI Yu, TANG Xiao-Li, ZHANG Wan-Li
School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054
Pseudo-Spin-Valve Trilayer Using Amorphous CoNbZr Layer: Giant Magnetoresistance, Domain Structures and Potentials for Spin-Electronic Devices
WEN Qi-Ye;ZHANG Huai-Wu;JIANG Xiang-Dong;SHI Yu;TANG Xiao-Li;ZHANG Wan-Li
School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054
关键词 ：
75.47.De ,
75.60.Nt ,
75.70.Kw
Abstract ： We propose a pseudo-spin-valve (PSV) trilayer using amorphous CoNbZr alloy for soft magnetic layers. The giant magnetoresistance (GMR), domain structures and their variation upon thermal annealing are investigated. The GMR effect is not only stable up to 300°C but also enhanced due to the improvement of the interfaces between Cu and magnetic layers. With high annealing temperature, the magnetoresistance (MR) ratio decreases rapidly as a result of serious layer interdiffusion. Dense stripe domains, which disappear after annealing at 300°C for 1 h, are observed in the sandwiched films. It is found that after patterning to elliptic stripe with aspect ratio of 6:1, the trilayers have a single domain and their MR ratio increases. The dynamic MR behaviour under an ac magnetic field indicates that the patterned stripes have good linear MR responses. Therefore, it is believed that the CoNbZr/Cu/Co PSV trilayers have strong potentials for spin-electronic devices including magnetic random access memory.
Key words ：
75.47.De
75.60.Nt
75.70.Kw
出版日期: 2004-05-01
:
75.47.De
(Giant magnetoresistance)
75.60.Nt
(Magnetic annealing and temperature-hysteresis effects)
75.70.Kw
(Domain structure (including magnetic bubbles and vortices))
引用本文:
WEN Qi-Ye;ZHANG Huai-Wu;JIANG Xiang-Dong;SHI Yu;TANG Xiao-Li;ZHANG Wan-Li. Pseudo-Spin-Valve Trilayer Using Amorphous CoNbZr Layer: Giant Magnetoresistance, Domain Structures and Potentials for Spin-Electronic Devices[J]. 中国物理快报, 2004, 21(5): 941-944.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2004/V21/I5/941
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