1Structure Research Laboratory & Department of Astronomy and Applied Physics, University of Science and Technology of China, Hefei 230026
2Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong
Polarization Fatigue in Ferroelectric Thin Films
WANG Yi1,2;K. H. WONG2;WU Wen-Bin1
1Structure Research Laboratory & Department of Astronomy and Applied Physics, University of Science and Technology of China, Hefei 230026
2Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong
Abstract： The fatigue problem in ferroelectric thin films is investigated based on the switched charge per unit area versus switching cycles. The temperature, dielectric permittivity, voltage bias, frequency and defect valence dependent switching polarization properties are calculated quantitatively with an extended Dawber-Scott model. The results are in agreement with the recent experiments.
WANG Yi;K. H. WONG;WU Wen-Bin. Polarization Fatigue in Ferroelectric Thin Films[J]. 中国物理快报, 2002, 19(4): 566-568.
WANG Yi, K. H. WONG, WU Wen-Bin. Polarization Fatigue in Ferroelectric Thin Films. Chin. Phys. Lett., 2002, 19(4): 566-568.
2002, Vol. 19 
