Influences of Annealing on the Opto-electronic Properties of
ZnO Films Grown by Plasma-Enhanced MOCVD
WANG Jin-Zhong1, DU Guo-Tong1, WANG Xin-Qiang1, CHANG Yu-Chun1, YAN Wei1, YANG Shu-Ren1, MA Yan1, WANG Hai-Song1, GAO Ding-San1, LIU Xiang2, CAO Hui2, XU Jun-Ying2, R. P. H. Chang2
1Department of Electronic Engineering and Key Laboratory on Integrated Photoelectronics, Jilin University, Changchun 130023
2Material Research Center, Northwestern University, Evanston, Illinois, U.S.A.
Influences of Annealing on the Opto-electronic Properties of
ZnO Films Grown by Plasma-Enhanced MOCVD
WANG Jin-Zhong1;DU Guo-Tong1;WANG Xin-Qiang1;CHANG Yu-Chun1;YAN Wei1;YANG Shu-Ren1;MA Yan1;WANG Hai-Song1;GAO Ding-San1;LIU Xiang2;CAO Hui2;XU Jun-Ying2;R. P. H. Chang2
1Department of Electronic Engineering and Key Laboratory on Integrated Photoelectronics, Jilin University, Changchun 130023
2Material Research Center, Northwestern University, Evanston, Illinois, U.S.A.
Abstract： ZnO thin films have been grown on C-plane sapphire substrates by plasma-enhanced metal-organic chemical vapor deposition. The samples are then annealed at a higher temperature. The resistivity, concentration of electron, mobility and optically pumped threshold of both as-grown and annealed films are investigated. Furthermore, their structural and optical properties are also examined with x-ray diffraction, emission spectra and optical transmission spectra. The results indicate that the quality of ZnO thin films can be improved by annealing.
(Optical properties of bulk materials and thin films)
引用本文:
WANG Jin-Zhong;DU Guo-Tong;WANG Xin-Qiang;CHANG Yu-Chun;YAN Wei;YANG Shu-Ren;MA Yan;WANG Hai-Song;GAO Ding-San;LIU Xiang;CAO Hui;XU Jun-Ying;R. P. H. Chang. Influences of Annealing on the Opto-electronic Properties of
ZnO Films Grown by Plasma-Enhanced MOCVD
[J]. 中国物理快报, 2002, 19(4): 581-583.
WANG Jin-Zhong, DU Guo-Tong, WANG Xin-Qiang, CHANG Yu-Chun, YAN Wei, YANG Shu-Ren, MA Yan, WANG Hai-Song, GAO Ding-San, LIU Xiang, CAO Hui, XU Jun-Ying, R. P. H. Chang. Influences of Annealing on the Opto-electronic Properties of
ZnO Films Grown by Plasma-Enhanced MOCVD
. Chin. Phys. Lett., 2002, 19(4): 581-583.
2002, Vol. 19 
