Optimization and Finite Element Analysis of the Temperature Field in a Nitride MOCVD Reactor by Induction Heating
LI Zhi-Ming, HAO Yue, ZHANG Jin-Cheng, CHEN Chi, CHANG Yong-Ming, XU Sheng-Rui, BI Zhi-Wei
School of Microelectronics, Xidian University, Xi'an 710071 Key Laboratary of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071
Optimization and Finite Element Analysis of the Temperature Field in a Nitride MOCVD Reactor by Induction Heating
LI Zhi-Ming, HAO Yue, ZHANG Jin-Cheng, CHEN Chi, CHANG Yong-Ming, XU Sheng-Rui, BI Zhi-Wei
School of Microelectronics, Xidian University, Xi'an 710071 Key Laboratary of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071
A susceptor structure with a ring channel for a vertical metalorganic chemical vapor deposition reactor by induction heating is proposed. Thus the directions of heat conduction are changed by the channel, and the channel makes the heat in the susceptor redistribute. The pattern of heat transfer in this susceptor is also analyzed. In addition, the location and size of the channel in the susceptor are optimized using the finite element method. A comparison between the optimized and the conventional susceptor shows that the optimized susceptor not only enhances the heating efficiency but also the uniformity of temperature distribution in the wafer, which contributes to improving the quality of the film growth.
A susceptor structure with a ring channel for a vertical metalorganic chemical vapor deposition reactor by induction heating is proposed. Thus the directions of heat conduction are changed by the channel, and the channel makes the heat in the susceptor redistribute. The pattern of heat transfer in this susceptor is also analyzed. In addition, the location and size of the channel in the susceptor are optimized using the finite element method. A comparison between the optimized and the conventional susceptor shows that the optimized susceptor not only enhances the heating efficiency but also the uniformity of temperature distribution in the wafer, which contributes to improving the quality of the film growth.
LI Zhi-Ming;HAO Yue;ZHANG Jin-Cheng;CHEN Chi;CHANG Yong-Ming;XU Sheng-Rui;BI Zhi-Wei. Optimization and Finite Element Analysis of the Temperature Field in a Nitride MOCVD Reactor by Induction Heating[J]. 中国物理快报, 2010, 27(7): 70701-070701.
LI Zhi-Ming, HAO Yue, ZHANG Jin-Cheng, CHEN Chi, CHANG Yong-Ming, XU Sheng-Rui, BI Zhi-Wei. Optimization and Finite Element Analysis of the Temperature Field in a Nitride MOCVD Reactor by Induction Heating. Chin. Phys. Lett., 2010, 27(7): 70701-070701.
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2010, Vol. 27 
