Observation of As-Grown Defects in Zn-Doped GaAs by Positron Lifetime Spectra
WANG Zhu, WANG Shao-Jie, CHEN Zhi-Quan
Department of Physics, Wuhan University, Wuhan 430072
Observation of As-Grown Defects in Zn-Doped GaAs by Positron Lifetime Spectra
WANG Zhu;WANG Shao-Jie;CHEN Zhi-Quan
Department of Physics, Wuhan University, Wuhan 430072
关键词 ：
78.70.Bj
Abstract ： Positron lifetime spectra were measured for the Zn-doped p-type GaAs. In comparing the horizontal-Bridgman-method-grown and the floating-zone-method grown p- type GaAs with the liquid-encapsulation-Czochralski-grown p-type GaAs samples, positron trapping into vacancy type defects was observed in the former two grown p-type GaAs. Shallow positron traps were detected, and the dominant ones were attributed to acceptor the in p-type GaAs.
Key words ：
78.70.Bj
出版日期: 2000-11-01
引用本文:
WANG Zhu;WANG Shao-Jie;CHEN Zhi-Quan. Observation of As-Grown Defects in Zn-Doped GaAs by Positron Lifetime Spectra[J]. 中国物理快报, 2000, 17(11): 841-843.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2000/V17/I11/841
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2000, Vol. 17 
