Photoluminescence of Polycrystalline SiC Sintered from Graphite and Si Melt
CHEN Zhi-Ming1, MA Jian-Ping1, WANG Jian-Nong2, LU Gang2, YU Ming-Bin1, LEI Tian-Min1, GE Wei-Kun2
1Department of Applied Electronics, Xian University of Technology, Xian 710048
2Department of Physics, Hong Kong University of Sciences and Technology, Hong Kong
Photoluminescence of Polycrystalline SiC Sintered from Graphite and Si Melt
1Department of Applied Electronics, Xian University of Technology, Xian 710048
2Department of Physics, Hong Kong University of Sciences and Technology, Hong Kong
Abstract： Intense wide-band photoluminescence (PL) with high stability to ultraviolet (UV) light irradiation has been observed in a wide temperature range from a polycrystalline SiC sintered from graphite and melt Si at high temperature over 1500°C. X-ray diffraction results showed that the sintered material consists of mainly cubic and 6H-SiC crystallites oriented randomly and a small amount of graphite with (002) preferential orientation. PL spectra of the samples were measured under excitation of the incident UV light beam from an He-Cd laser (325 nm, 10mW) in the temperature range from 10 to 300 K. The PL spectra were found to be a single wide-band centered around 2.2 eV at room temperature and to be divided into a much more intensive blue band and a less intensive red band at low temperature. The low temperature PL bands consist of several luminescence peaks that change in intensities relatively with variation of temperature.
CHEN Zhi-Ming;MA Jian-Ping;WANG Jian-Nong;LU Gang;YU Ming-Bin;LEI Tian-Min;GE Wei-Kun. Photoluminescence of Polycrystalline SiC Sintered from Graphite and Si Melt[J]. 中国物理快报, 2000, 17(10): 770-772.
CHEN Zhi-Ming, MA Jian-Ping, WANG Jian-Nong, LU Gang, YU Ming-Bin, LEI Tian-Min, GE Wei-Kun. Photoluminescence of Polycrystalline SiC Sintered from Graphite and Si Melt. Chin. Phys. Lett., 2000, 17(10): 770-772.
2000, Vol. 17 
