Effects of Heat Treatment on Luminescence of Er-Doped Silicon-Rich SiO2 Prepared by rf Co-sputtering
ZHANG Chang-Sheng, XIAO Hai-Bo, CHEN Zhi-Jun, CHENG Xin-Li, ZHANG Feng
Ion Beam Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
Effects of Heat Treatment on Luminescence of Er-Doped Silicon-Rich SiO2 Prepared by rf Co-sputtering
ZHANG Chang-Sheng;XIAO Hai-Bo;CHEN Zhi-Jun;CHENG Xin-Li;ZHANG Feng
Ion Beam Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
关键词 ：
73.63.Bd ,
78.55.Hx ,
85.12.Cd
Abstract ： Er-doped silicon-rich SiO2 thin films were prepared by an rf co-sputtering method, followed by thermal annealing at 700-1200°C for 30 min. The microstructure is studied by transmission electron microscopy (TEM) and x-ray diffraction (XRD). When the films are annealed at T > 900°C, silicon nanocrystals (nc-Si) enveloped by amorphous silicon (α-Si) can be observed. The thermal quenching behaviour at γ = 1.535 μm and its relation with the annealing temperature are also investigated. With the increasing annealing temperature, the portion of α-Si and the intensity quenching both decrease. Efficient luminescence from Er ions and weak intensity thermal quenching can be obtained from the sample annealed at 1100°C. The role of α-Si in the non-radiative processes at T > 100 K is discussed.
Key words ：
73.63.Bd
78.55.Hx
85.12.Cd
出版日期: 2004-07-01
引用本文:
ZHANG Chang-Sheng;XIAO Hai-Bo;CHEN Zhi-Jun;CHENG Xin-Li;ZHANG Feng. Effects of Heat Treatment on Luminescence of Er-Doped Silicon-Rich SiO2 Prepared by rf Co-sputtering[J]. 中国物理快报, 2004, 21(7): 1333-1336.
2 Prepared by rf Co-sputtering. Chin. Phys. Lett., 2004, 21(7): 1333-1336.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2004/V21/I7/1333
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