A Bragg-Mirror-Based Semiconductor Saturable Absorption Mirror at 800 nm with Low Temperature and Surface State Hybrid Absorber
WANG Yong-Gang1, MA Xiao-Yu1, WANG Yi-Shan2, CHEN Guo-Fu2, ZHAO Wei2, ZHANG Zhi-Gang3
1Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2State Key Laboratory of Transient Optics and Technology, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an 710068
3School of Applied Mathematics and Physics, Beijing Polytechnic University, Beijing 100022
A Bragg-Mirror-Based Semiconductor Saturable Absorption Mirror at 800 nm with Low Temperature and Surface State Hybrid Absorber
WANG Yong-Gang1;MA Xiao-Yu1;WANG Yi-Shan2;CHEN Guo-Fu2;ZHAO Wei2;ZHANG Zhi-Gang3
1Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2State Key Laboratory of Transient Optics and Technology, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an 710068
3School of Applied Mathematics and Physics, Beijing Polytechnic University, Beijing 100022
Abstract： We present a novel 800-nm Bragg-mirror-based semiconductor saturable absorption mirror with low temperature and surface state hybrid absorber, with which we can realize the passive soliton mode locking of a Ti:sapphire laser pumped by 532-nm green laser which produces pulses as short as 37 fs. The reflection bandwidth of the mirror is 30 nm and the pulse frequency is 107 MHz. The average output power is 1.1 W at the pump power of 7.6 W.
WANG Yong-Gang;MA Xiao-Yu;WANG Yi-Shan;CHEN Guo-Fu;ZHAO Wei;ZHANG Zhi-Gang. A Bragg-Mirror-Based Semiconductor Saturable Absorption Mirror at 800 nm with Low Temperature and Surface State Hybrid Absorber[J]. 中国物理快报, 2004, 21(7): 1282-1284.
WANG Yong-Gang, MA Xiao-Yu, WANG Yi-Shan, CHEN Guo-Fu, ZHAO Wei, ZHANG Zhi-Gang. A Bragg-Mirror-Based Semiconductor Saturable Absorption Mirror at 800 nm with Low Temperature and Surface State Hybrid Absorber. Chin. Phys. Lett., 2004, 21(7): 1282-1284.
2004, Vol. 21 
