Top-Emitting Organic Light-Emitting Devices Based on Silicon Substrate with High Luminance and Low Turn-on Voltage
WU Zhi-Jun1 , CHEN Shu-Fen1 , YANG Hui-Shan1,2 , ZHAO Yi1 , LI Chuan-Nan1 , HOU Jing-Ying1 , LIU Shi-Yong1
1 National Laboratory of Integrated Optoelectronics, Jilin University, Changchun 130023
2 Department of Physics, Quanzhou Normal College, Quanzhou 362000
Top-Emitting Organic Light-Emitting Devices Based on Silicon Substrate with High Luminance and Low Turn-on Voltage
WU Zhi-Jun1 ;CHEN Shu-Fen1 ;YANG Hui-Shan1,2 ;ZHAO Yi1 ;LI Chuan-Nan1 ;HOU Jing-Ying1 ;LIU Shi-Yong1
1 National Laboratory of Integrated Optoelectronics, Jilin University, Changchun 130023
2 Department of Physics, Quanzhou Normal College, Quanzhou 362000
关键词 ：
78.60.Fi ,
78.66.Qn ,
85.60.Jb
Abstract ： We have fabricated a top-emitting organic light-emitting device on silicon substrate with high yellow luminance based on 5,6,11,12-tetraphenylnaphthacene sub-monolayer. It consists of a thin layer of highly conductive silver as the semitransparent cathode and surfaced-modified Ag as the anode. The device turns on at 3V with the luminance of 8.4cd/m2 . The maximum current efficiency is 1.3cd/A at 6V and the luminance reaches 14790cd/m2 at 14V. The performance of the device is excellent in top-emitting organic light-emitting devices according to our knowledge.
Key words ：
78.60.Fi
78.66.Qn
85.60.Jb
出版日期: 2005-01-01
引用本文:
WU Zhi-Jun;CHEN Shu-Fen;YANG Hui-Shan;ZHAO Yi;LI Chuan-Nan;HOU Jing-Ying;LIU Shi-Yong. Top-Emitting Organic Light-Emitting Devices Based on Silicon Substrate with High Luminance and Low Turn-on Voltage[J]. 中国物理快报, 2005, 22(1): 233-235.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2005/V22/I1/233
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2005, Vol. 22 
