Strain Induced Insulator-Metal Transition in Single Wall Carbon Nanotubes
DING Jian-Wen, YAN Xiao-Hong, LIU Chao-Ping, TANG Na-Si
Department of Physics, Xiangtan University, Xiangtan 411105
Strain Induced Insulator-Metal Transition in Single Wall Carbon Nanotubes
DING Jian-Wen;YAN Xiao-Hong;LIU Chao-Ping;TANG Na-Si
Department of Physics, Xiangtan University, Xiangtan 411105
关键词 ：
61.48.+c ,
62.25.+g ,
71.20.Tx
Abstract ： In terms of a single-π orbital model, an analytical expression of the lowest-lying conduction-band and the highest-lying valence-band is derived for single wall carbon nanotubes under both the uniaxial and torsional strains. We observe not only semiconductor-metal transitions in primary metallic tubes, but also insulator-metal transitions in semiconducting tubes. Additionally, an indirect transition of electrons and a quantized electron-resonance have been expected in optical spectrum experiments of the nanotubes.
Key words ：
61.48.+c
62.25.+g
71.20.Tx
出版日期: 2004-04-01
引用本文:
DING Jian-Wen;YAN Xiao-Hong;LIU Chao-Ping;TANG Na-Si. Strain Induced Insulator-Metal Transition in Single Wall Carbon Nanotubes[J]. 中国物理快报, 2004, 21(4): 704-706.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2004/V21/I4/704
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2004, Vol. 21 
