Two Types of Pressure Dependence of Residual Resistivity in Doped Kondo Insulators
YUAN Yi-Zhe, LI Zheng-Zhong, XIAO Ming-Wen, XU Wang, XU Xiao-Hua
Department of Physics, Nanjing University, Nanjing 210093
Two Types of Pressure Dependence of Residual Resistivity in Doped Kondo Insulators
YUAN Yi-Zhe;LI Zheng-Zhong;XIAO Ming-Wen;XU Wang;XU Xiao-Hua
Department of Physics, Nanjing University, Nanjing 210093
关键词 ：
75.30.Mb ,
72.28.+d ,
75.20.Hr
Abstract ： The pressure dependence of the residual resistivity of the doped electron-type and hole-type Kondo insulators (KIs) are calculated within the framework of the slave-boson mean-field theory and the coherent potential approximation. It is shown that as the pressure increases, the resistivity increases and decreases for the dilute doping electron-type and hole-type KIs, respectively. These results are qualitatively in agreement with the experiments.
Key words ：
75.30.Mb
72.28.+d
75.20.Hr
出版日期: 2004-07-01
:
75.30.Mb
(Valence fluctuation, Kondo lattice, and heavy-fermion phenomena)
72.28.+d
75.20.Hr
(Local moment in compounds and alloys; Kondo effect, valence fluctuations, heavy fermions)
引用本文:
YUAN Yi-Zhe;LI Zheng-Zhong;XIAO Ming-Wen;XU Wang;XU Xiao-Hua. Two Types of Pressure Dependence of Residual Resistivity in Doped Kondo Insulators[J]. 中国物理快报, 2004, 21(7): 1348-1351.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2004/V21/I7/1348
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