Explicit Analysis of Creating Maximally Entangled State in the Mott Insulator State
LI Min-Si1,2, TIAN Li-Jun3, ZHANG Hong-Biao4
1Theoretical Physics Division, Nankai Institute of Mathematics, Nankai University, Tianjin 300071
2Liuhui Centre for Applied Mathematics, Nankai University and Tianjin University, Tianjin 300071
3Department of Physics, College of Science, Shanghai University, Shanghai 200436
4Institute of Theoretical Physics, Northeast Normal University, Changchun 130024
Explicit Analysis of Creating Maximally Entangled State in the Mott Insulator State
LI Min-Si1,2;TIAN Li-Jun3;ZHANG Hong-Biao4
1Theoretical Physics Division, Nankai Institute of Mathematics, Nankai University, Tianjin 300071
2Liuhui Centre for Applied Mathematics, Nankai University and Tianjin University, Tianjin 300071
3Department of Physics, College of Science, Shanghai University, Shanghai 200436
4Institute of Theoretical Physics, Northeast Normal University, Changchun 130024
Abstract： We clarify the essence of the method proposed by You (Phys. Rev. Lett. 90(2004)030402) to create the maximally entangled atomic N-GHZ state in the Mott insulator state. Based on the time-independent perturbation theory, we find that the validity of the method can be summarized as that the Hamiltonian governing the evolution is approximately equivalent to the type aJ2x+bJx, which is the well known form used to create the maximally entangled state.
LI Min-Si;TIAN Li-Jun;ZHANG Hong-Biao. Explicit Analysis of Creating Maximally Entangled State in the Mott Insulator State[J]. 中国物理快报, 2004, 21(12): 2347-2350.
LI Min-Si, TIAN Li-Jun, ZHANG Hong-Biao. Explicit Analysis of Creating Maximally Entangled State in the Mott Insulator State. Chin. Phys. Lett., 2004, 21(12): 2347-2350.
2004, Vol. 21 
