SiC-Based p+ nn+ Diode for Picosecond Semiconductor Closing Switch
ZHANG Fei, LI Cheng-Fang
Department of Physics, Wuhan University, Wuhan 430072
SiC-Based p+ nn+ Diode for Picosecond Semiconductor Closing Switch
ZHANG Fei;LI Cheng-Fang
Department of Physics, Wuhan University, Wuhan 430072
关键词 ：
85.30.De ,
85.30.Kk
Abstract ： We study a SiC-based diode with a p+ nn+ structure for picosecond semiconductor closing switch and discuss the physical process, which underlies the operation principle of high-power closing switch based on a delayed breakdown diode. By two-dimensional mixed device-circuit simulations, we demonstrate a single device reliably operated at 4 kV and at risetime 11 ps with high output dV/dt=276 kV/ns, which is in good agreement with the experimental results.
Key words ：
85.30.De
85.30.Kk
出版日期: 2004-11-01
:
85.30.De
(Semiconductor-device characterization, design, and modeling)
85.30.Kk
(Junction diodes)
引用本文:
ZHANG Fei;LI Cheng-Fang. SiC-Based p+ nn+ Diode for Picosecond Semiconductor Closing Switch[J]. 中国物理快报, 2004, 21(11): 2305-2307.
+ nn+ Diode for Picosecond Semiconductor Closing Switch. Chin. Phys. Lett., 2004, 21(11): 2305-2307.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2004/V21/I11/2305
[1]
LIU Bo;FENG Gao-Ming;WU Liang-Cai;SONG Zhi-Tang;LIU Qi-Bin;FENG Song-Lin;CHEN Bomy. Chalcogenide Random Access Memory Cell with Structure of W Sub-Microtube Heater Electrode
[2]
WU Liang-Cai;LIU Bo;SONG Zhi-Tang;FENG Gao-Ming;FENG Song-Lin;CHEN Bomy. Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy
[3]
LAI Yun-Feng;FENG Jie;QIAO Bao-Wei;HUANG Xiao-Gang;CAI Yan-Fei;LIN Yin-Yin;TANG Ting-Ao;CAI Bing-Chu;CHEN Bomy. Multiple-State Storage Capability of Stacked Chalcogenide Films (Si16 Sb33 Te51 /Si4 Sb45 Te51 /Si39 Sb Te50 ) for Phase Change Memory
[4]
MA Hong-Xia;HAN Yan-Jun;SHENTU Wei-Jin;ZHANG Xian-Peng;LUO Yi;. A Novel Ni/Ag/Pt Ohmic Contact to P-Type GaN for Flip-Chip Light-Emitting Diodes
[5]
ZHAO Xu;WANG Yan;YU Zhi-Ping. Modelling of Chirality-Dependent Current--Voltage Characteristics of Carbon-Nanotube Field-Effect Transistors
[6]
ZHAO Yao;XU Ming-Zhen;TAN Chang-Hua. Effect of Reverse Substrate Bias on Degradation of Ultra-Thin Gate-Oxide n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors under Different Stress Modes
[7]
LIU Bo;SONG Zhi-Tang;FENG Song-Lin; CHEN Bomy. Reversible Phase Change for C-RAM Nano-Cell-Element Fabricated by Focused Ion Beam Method
[8]
CHEN Min;GUO Xia;DENG Jun;GAI Hong-Xing;DONG Li-Min;QU Hong-Wei;GUAN Bao-Lu;GAO Guo;SHEN Guang-Di. Low-Threshold and High-Power Oxide-Confined 850nm AlInGaAs Strained Quantum-Well Vertical-Cavity Surface-Emitting Lasers Based on Intra-Cavity Contacted Structure
[9]
HE Xiao-Yong;CAO Jun-Cheng;L{U} Jing-Tao;FENG Song-Lin. Simulation of Confined and Interface Phonons Scattering in Terahertz Quantum Cascade Laser
[10]
GAO Yong;MA Li. Analysis and Optimal Design of a Novel SiGe/Si Power Diode for Fast and Soft Recovery
[11]
Lü Hui-Bin;JIN Kui-Juan;HUANG Yan-Hong;HE Meng;ZHAO Kun;ZHOU Yue-Liang;CHENG Bo-Lin;CHEN Zheng-Hao;DAI Shou-Yu;YANG Guo-Zhen. Ultrafast Photoelectric Effects in Heterojunctions of La0.7 Sr0.3 MnO3 and Si
[12]
LIU Bo;SONG Zhi-Tang;FENG Song-Lin;CHEN Bomy. Single Cell Element of Chalcogenide Random Access Memory Fabricated with the Focused Ion Beam Method
[13]
GU Bei-Bei;WANG Lin-Jun;ZHANG Ming-Long;XIA Yi-Ben. Investigation of Chemical-Vapour-Deposition Diamond Alpha-Particle Detectors
[14]
ZHU Ming;LIN Qing;ZHANG Zheng-Xuan;LIN Cheng-Lu. A New Structure of Silicon-on-Insulator Metal-Oxide-Semiconductor Filed Effect Transistor to Suppress the Floating Body Effect
[15]
LI Xian-Jie;CAI Dao-Min;ZENG Qing-Ming;LIU Shi-Yong;LIANG Chun-Guang. Self-Aligned InP/InGaAs Single Heterojunction Bipolar Transistor with Novel Micro-airbridge Structure and Quasi-coplanar Contacts
2004, Vol. 21 
