Silicon-on-Insulator Based Electro-optic Variable Optical Attenuator with a Series Structure
HE Yue-Jiao, LI Fang, LIU Yu-Liang
Research and Development Centre on Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Silicon-on-Insulator Based Electro-optic Variable Optical Attenuator with a Series Structure
HE Yue-Jiao;LI Fang;LIU Yu-Liang
Research and Development Centre on Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
关键词 ：
42.30.Lr ,
42.82.Cr ,
42.25.Et
Abstract ： An electro-optic variable optical attenuator in silicon-on-insulator is designed and fabricated. A series structure is used to improve the device efficiency. Compared to the attenuator in the single p-i-n diode structure in the same modulating length, the attenuation range of the device in the series structure improves 2--3 times in the same injecting current density, while the insertion loss is not affected. The maximum dynamic attenuation of the device is greater than 30dB. The response frequency is obtained to be about 2MHz.
Key words ：
42.30.Lr
42.82.Cr
42.25.Et
出版日期: 2005-01-01
:
42.30.Lr
(Modulation and optical transfer functions)
42.82.Cr
(Fabrication techniques; lithography, pattern transfer)
42.25.Et
引用本文:
HE Yue-Jiao;LI Fang;LIU Yu-Liang. Silicon-on-Insulator Based Electro-optic Variable Optical Attenuator with a Series Structure[J]. 中国物理快报, 2005, 22(1): 95-98.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2005/V22/I1/95
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