Single Cell Element of Chalcogenide Random Access Memory Fabricated with the Focused Ion Beam Method
LIU Bo1, SONG Zhi-Tang1, FENG Song-Lin1, CHEN Bomy2
1Research Centre of Functional Semiconductor Film Engineering and Technology, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences, Shanghai 200050
2Silicon Storage Technology, Inc. 1171 Sonora Court, Sunnyvale, CA 94086 USA
Single Cell Element of Chalcogenide Random Access Memory Fabricated with the Focused Ion Beam Method
LIU Bo1;SONG Zhi-Tang1;FENG Song-Lin1;CHEN Bomy2
1Research Centre of Functional Semiconductor Film Engineering and Technology, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences, Shanghai 200050
2Silicon Storage Technology, Inc. 1171 Sonora Court, Sunnyvale, CA 94086 USA
Abstract： A single cell element of chalcogenide random access memory was fabricated by using the focused ion beam method. The contact size between the Ge2Sb2Te5 phase change film and the top electrode film is about 600nm (diameter) and the contact area is calculated to be 0.28μm2. The thickness of the phase change film is 83nm. The current--voltage characteristics of the cell element are studied using the home-made current--voltage tester in our laboratory. The minimum threshold current of about 0.6mA is obtained.
(Semiconductor-device characterization, design, and modeling)
引用本文:
LIU Bo;SONG Zhi-Tang;FENG Song-Lin;CHEN Bomy. Single Cell Element of Chalcogenide Random Access Memory Fabricated with the Focused Ion Beam Method[J]. 中国物理快报, 2004, 21(10): 2054-2056.
LIU Bo, SONG Zhi-Tang, FENG Song-Lin, CHEN Bomy. Single Cell Element of Chalcogenide Random Access Memory Fabricated with the Focused Ion Beam Method. Chin. Phys. Lett., 2004, 21(10): 2054-2056.
2004, Vol. 21 
