High-Density Read-Only Memory Disc with Ag11In12Sb51Te26 Super-Resolution Mask Layer

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	ZHANG Feng
	WANG Yang
	XU Wen-Dong
	SHI Hong-Ren
	WEI Jing-Song
	GAN Fu-Xi

关键词 ： 42.70.Ln, 42.70.Nq, 42.79.Vb

Abstract： A novel read-only memory (ROM) disc with an Ag₁₁In₁₂Sb₅₁Te₂₆ super-resolution mask layer is proposed and investigated for the first time to our knowledge. The carrier-to-noise ratio of more than 40dB could be obtained from small pits (380nm), which are below the readout resolution limit (400nm), in our dynamic setup with a wavelength of 632.8nm and numerical aperture of 0.40. Dependences of carrier-to-noise ratio on readout power, readout velocity and film thickness are studied. The results show that the optimum film thickness is 20-50nm and the corresponding carrier-to-noise ratio is more than 40dB at readout power of 4mW and readout velocity of 2m/s in our experiment. The super-resolution readout mechanism for this ROM disc is also discussed.

Key words： 42.70.Ln 42.70.Nq 42.79.Vb

出版日期: 2004-10-01

:	42.70.Ln	(Holographic recording materials; optical storage media)
	42.70.Nq	(Other nonlinear optical materials; photorefractive and semiconductor materials)
	42.79.Vb	(Optical storage systems, optical disks)

引用本文:

ZHANG Feng;WANG Yang;XU Wen-Dong;SHI Hong-Ren;WEI Jing-Song;GAN Fu-Xi. High-Density Read-Only Memory Disc with Ag₁₁In₁₂Sb₅₁Te₂₆ Super-Resolution Mask Layer[J]. 中国物理快报, 2004, 21(10): 1973-1975.
ZHANG Feng, WANG Yang, XU Wen-Dong, SHI Hong-Ren, WEI Jing-Song, GAN Fu-Xi. High-Density Read-Only Memory Disc with Ag₁₁In₁₂Sb₅₁Te₂₆ Super-Resolution Mask Layer. Chin. Phys. Lett., 2004, 21(10): 1973-1975.

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https://cpl.iphy.ac.cn/CN/ 或 https://cpl.iphy.ac.cn/CN/Y2004/V21/I10/1973