Abstract： Pentacene organic thin-film transistors using commercial photoresist as gate dielectrics were fabricated. The photoresist was spin-coated and directly patterned by photolithography. As a result, the fabrication processes were greatly reduced. With the characteristics of the transistors measured, the degradation of the transistors was investigated. In the search for the factors causing degradation, a transistor using poly(methyl methacrylate) as the gate dielectric was also fabricated. It is regarded that the degradation is caused by the changes at the interface between photoresist and pentacene film.
LIANG Yan;DONG Gui-Fang;HU Yuan-Chuan;HU Yan;WANG Li-Duo;QIU Yong. Fabrication of Pentacene Thin-Film Transistors with Patterned Polyimide Photoresist as Gate Dielectrics and Research of Their Degradation[J]. 中国物理快报, 2004, 21(11): 2278-2280.
LIANG Yan, DONG Gui-Fang, HU Yuan-Chuan, HU Yan, WANG Li-Duo, QIU Yong. Fabrication of Pentacene Thin-Film Transistors with Patterned Polyimide Photoresist as Gate Dielectrics and Research of Their Degradation. Chin. Phys. Lett., 2004, 21(11): 2278-2280.
2004, Vol. 21 
