esonant Optical Absorption in Semiconductor Quantum Wells
YU Li-Yuan, CAO Jun-Cheng
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
esonant Optical Absorption in Semiconductor Quantum Wells
YU Li-Yuan;CAO Jun-Cheng
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
Abstract： We have calculated the intraband photon absorption coefficients of hot two-dimensional electrons interacting with polar-optical phonon modes in quantum wells. The dependence of the photon absorption coefficients on the photon wavelength λ is obtained both by using the quantum mechanical theory and by the balance-equation theory. It is found that the photon absorption spectrum displays a local resonant maximum, corresponding to LO energy, and the absorption peak vanishes with increasing the electronic temperature.
2004, Vol. 21 
