Influence of Growth Temperature and Trimethylindium Flow of InGaN Wells on Optical Properties of InGaN Multiple Quantum-Well Violet Light-Emitting Diodes
LI Zhong-Hui1,2,3, YU Tong-Jun2, YANG Zhi-Jian2, TONG Yu-Zhen2, ZHANG Guo-Yi2, FENG Yu-Chun1, GUO Bao-Ping1, NIU Han-Ben1
1Key Laboratory of Optoelectronic Devices and Systems (Ministry of Education), Institute of Optoelectronics, Shenzhen University, Shenzhen 518060
2State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871
3School of Materials Engineering, Changchun University of Science and Technology, Changchun 130022
4School of Precision Instrument and Opto-Electronics Engineering, Tianjin University, Tianjin 300072
Influence of Growth Temperature and Trimethylindium Flow of InGaN Wells on Optical Properties of InGaN Multiple Quantum-Well Violet Light-Emitting Diodes
LI Zhong-Hui1,2,3;YU Tong-Jun2;YANG Zhi-Jian2;TONG Yu-Zhen2;ZHANG Guo-Yi2;FENG Yu-Chun1;GUO Bao-Ping1;NIU Han-Ben1
1Key Laboratory of Optoelectronic Devices and Systems (Ministry of Education), Institute of Optoelectronics, Shenzhen University, Shenzhen 518060
2State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871
3School of Materials Engineering, Changchun University of Science and Technology, Changchun 130022
4School of Precision Instrument and Opto-Electronics Engineering, Tianjin University, Tianjin 300072
Abstract： An InGaN multiple-quantum-well (MQW) violet-light-emitting diode (LED) is grown by low-pressure metalorganic chemical vapour deposition. It is found that photoluminescence wavelength of the InGaN MQW violet LED is lengthened with increasing growth temperature and with the increasing trimethylindium flow of the InGaN wells. The electroluminescence peak wavelength of the violet LED are about 401nm with full width at half maximum of 14nm, and the output power in injection current of 20mA at room temperature is 4.1mW.
2004, Vol. 21 
