Theoretical Analysis of Characteristics of GaxIn1-xNyAs1-y/GaAs Quantum Well Lasers with Different Intermediate Layers

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	ZHANG Wei
	XU Ying-Qiang
	NIU Zhi-Chuan
	WU Rong-Han

关键词 ： 42.55.Px, 42.70.Hj, 78.20.Bh, 78.20.Ci

Abstract： Based on the band anticrossing model, the effects of the strain-compensated layer and the strain-mediated layer on the band structure, gain and differential gain of GaInNAs|GaAs quantum well lasers have been investigated. The results show that the GaNAs barrier has a disadvantage in increasing the density of states in the conduction band. Meanwhile, the multilayer quantum wells need higher transparency carrier density than the GaInNAs|GaAs single quantum well with the same wavelength. However, they help to suppress the degradation of the differential gain. The calculation also shows that from the viewpoint of band structure, the strain-compensated structure and the strain-mediated structure have similar features.

Key words： 42.55.Px 42.70.Hj 78.20.Bh 78.20.Ci

出版日期: 2003-08-01

:	42.55.Px	(Semiconductor lasers; laser diodes)
	42.70.Hj	(Laser materials)
	78.20.Bh	(Theory, models, and numerical simulation)
	78.20.Ci	(Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))

引用本文:

ZHANG Wei;XU Ying-Qiang;NIU Zhi-Chuan;WU Rong-Han. Theoretical Analysis of Characteristics of Ga_xIn_1-xN_yAs_1-y/GaAs Quantum Well Lasers with Different Intermediate Layers[J]. 中国物理快报, 2003, 20(8): 1261-1263.
ZHANG Wei, XU Ying-Qiang, NIU Zhi-Chuan, WU Rong-Han. Theoretical Analysis of Characteristics of Ga_xIn_1-xN_yAs_1-y/GaAs Quantum Well Lasers with Different Intermediate Layers. Chin. Phys. Lett., 2003, 20(8): 1261-1263.

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https://cpl.iphy.ac.cn/CN/ 或 https://cpl.iphy.ac.cn/CN/Y2003/V20/I8/1261