Annealing Effects on Properties of Bi-Substituted Garnet Films with Perpendicular Anisotropy Prepared by a Sol-Gel Method
ZHANG Yue-Pin1,2, WANG Xian-Ying1, Ruan Hao1, SHEN De-Fang1, GAN Fu-Xi1
1Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800
2Laboratory of Photo-Electronic Material, Ningbo University, Ningbo 315211
Annealing Effects on Properties of Bi-Substituted Garnet Films with Perpendicular Anisotropy Prepared by a Sol-Gel Method
1Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800
2Laboratory of Photo-Electronic Material, Ningbo University, Ningbo 315211
Abstract： Bi-substituted garnet films with perpendicular anisotropy have been prepared by a sol-gel method. Annealing effects on magneto-optical properties and structures of the films are studied. The results indicate that the Kerr hysteresis loops of garnet films have good squareness at annealing temperatures above 650°C, the coercive force Hc of these films increases from 1070 to 1570 Oe with the increasing temperature from 650°C to 700°C. The Kerr rotation of the films was changed with the increasing annealing temperature, and there is a maximum value (0.82°C) at 675°C. It was found that the structure of the films is a single phase of garnet without preferring orientation when the annealing temperature is about 650°C, but a new phase (Bi2Al4O9) can be formed when the annealing temperature reaches 675°C, another new phase (Bi2Fe4O9) appears when the annealing temperature is about 700°C.
(Magnetization curves, hysteresis, Barkhausen and related effects)
引用本文:
ZHANG Yue-Pin;WANG Xian-Ying;Ruan Hao;SHEN De-Fang;GAN Fu-Xi. Annealing Effects on Properties of Bi-Substituted Garnet Films with Perpendicular Anisotropy Prepared by a Sol-Gel Method[J]. 中国物理快报, 2003, 20(5): 746-748.
ZHANG Yue-Pin, WANG Xian-Ying, Ruan Hao, SHEN De-Fang, GAN Fu-Xi. Annealing Effects on Properties of Bi-Substituted Garnet Films with Perpendicular Anisotropy Prepared by a Sol-Gel Method. Chin. Phys. Lett., 2003, 20(5): 746-748.
2003, Vol. 20 
