Characterization of Uncooled Poly SiGe Microbolometer for Infrared Detection
DONG Liang, YUE Rui-Feng, LIU Li-Tian
Institute of Microelectronics, Tsinghua University, Beijing 100084
Characterization of Uncooled Poly SiGe Microbolometer for Infrared Detection
DONG Liang;YUE Rui-Feng;LIU Li-Tian
Institute of Microelectronics, Tsinghua University, Beijing 100084
关键词 ：
85.60.Gz ,
07.10.Cm
Abstract ： An uncooled poly SiGe microbolometer for infrared detection has been fabricated and characterized. The poly SiGe thin film is deposited by ultrahigh vacuum chemical vapor deposition (UHVCVD) system and its structural properties are characterized by Rutherford backscattering spectrometry (RBS) and Raman. The dependences of the temperature coefficient of resistance on operation temperature and on annealing temperature have been investigated. A leg-supported microbridge is used to decrease the thermal conductance of microbolometer with the silicon micromachining technique. The results show that at a chopping frequency of 15 Hz and a bias voltage of 5 V, the maximum detectivity of 8.3 x 108 cmHz1/2 /W is achieved with a thermal response time of 16.6 ms.
Key words ：
85.60.Gz
07.10.Cm
出版日期: 2003-05-01
:
85.60.Gz
(Photodetectors (including infrared and CCD detectors))
07.10.Cm
(Micromechanical devices and systems)
引用本文:
DONG Liang;YUE Rui-Feng;LIU Li-Tian. Characterization of Uncooled Poly SiGe Microbolometer for Infrared Detection[J]. 中国物理快报, 2003, 20(5): 770-773.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2003/V20/I5/770
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2003, Vol. 20 
